digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130108 MCR8D, mcr8m, mcr8n silicon controlled rectifiers available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol value unit peak repetitive off-state voltage (1) peak repetitive reverse voltage (t j = -40 to +125c) MCR8D mcr8m mcr8n v drm v rrm 400 600 800 v on-state rms current (all conduction angles) i t(rms) 8 a peak non-repetitive surge current (one half-cycle, 60hz, t j = 125c) i tsm 80 a circuit fusing (t = 8.3ms) i 2 t 26.5 a 2 s peak gate power (pulse width 1.0s, t c = 80c) p gm 5 w average gate power (t = 8.3ms, t c = 80c) p g(av) 0.5 w peak gate current (pulse width 1.0s, t c = 80c) i gm 2 a operating temperature range t j -40 to +125 c storage temperature range t stg -40 to +150 c thermal characteristics characteristic symbol maximum unit thermal resistance, junction to case r ? jc 2.0 c/w thermal resistance, junction to ambient r ? ja 62.5 c/w maximum lead temperature for soldering purposes 1/8? from case for 10s t l 260 c note 1: v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; positive gate voltage sh all not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the volta ge ratings of the devices are exceeded. electrical characteristics (t c = 25c, unless otherwise noted) characteristic symbol min typ max unit off characteristics peak forward blocking current peak reverse blocking current (v ak = rated v drm or v rrm , gate open) t j = 25c t j = 125c i drm i rrm - - - - 0.01 2.0 ma on characteristics peak on-state voltage * (i tm = 16a) v tm - - 1.8 v gate trigger current (continuous dc) (v d = 12v, r l = 100 ? ) i gt 2.0 7.0 15 ma gate trigger voltage (continuous dc) (v d = 12v, r l = 100 ? ) v gt 0.5 0.65 1.0 v holding current (anode voltage = 12v) i h 4.0 22 30 ma dynamic characteristics critical rate of rise of off-state voltage (v d = rated v drm , exponential waveform, gate open, t j = 125c) dv/dt 50 200 - v/s * pulse width 2.0ms, duty cycle 2%.
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MCR8D, mcr8m, mcr8n silicon controlled rectifiers mechanical characteristics case to-220ab marking alpha-numeric pin out see below fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130108
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